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K4S280832C

Part Number	K4S280832C
Manufacturer	Samsung semiconductor
Description	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Published	Apr 7, 2005
Detailed Description	K4S280832C CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2000 * Samsung Elec...
Datasheet	K4S280832C PDF File

Overview

K4S280832C CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.
0 Mar.
2000 * Samsung Electronics reserves the right to change products or specification without notice.
Rev.
0.
0 Mar.
2000 K4S280832C Revision History Revision 0.
0 (March 21, 2000) • Changed tOH of K4S280432C-TC75/TL75 from 2.
7ns to 3.
0ns.
• Deleted -10 and -80 speed specification.
CMOS SDRAM Rev.
0.
0 Mar.
2000 K4S280832C 4M x 8Bit x 4 Banks Synchronous DRAM FEATURES • JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4, 8 & Full page) -.
Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation • DQM for masking • Auto & self refresh • 64ms refresh period (4K cycle) CMOS SDRAM GENERAL DESCRIPTION The K4S280832C is 134,217,728 bits synchronous high data rate Dynam...

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