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K4S281632B-N

Part Number	K4S281632B-N
Manufacturer	Samsung semiconductor
Description	2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP
Published	Apr 7, 2005
Detailed Description	shrink-TSOP K4S281632B-N 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP FEATURES • JEDEC standard 3.3V power supply • LV...
Datasheet	K4S281632B-N PDF File

Overview

shrink-TSOP K4S281632B-N 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP FEATURES • JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs - CAS latency (2 & 3) - Burst length (1, 2, 4, 8 & Full page) - Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation • DQM for masking • Auto & self refresh • 64ms refresh period (4K cycle) CMOS SDRAM GENERAL DESCRIPTION The K4S281632B-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high perform...

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