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K4S51153LF

Part Number	K4S51153LF
Manufacturer	Samsung semiconductor
Description	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Published	Apr 7, 2005
Detailed Description	K4S51153LF - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMO...
Datasheet	K4S51153LF PDF File

Overview

K4S51153LF - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • VDD/VDDQ = 2.
5V/2.
5V or 2.
5V/1.
8V.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1, 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-.
PASR (Partial Array Self Refresh).
-.
Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking.
• Auto refresh.
• • • • 64ms refresh period (8K cycle).
Commercial Temper...

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