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K4S561633C-RL

Samsung semiconductor
Part Number K4S561633C-RL
Manufacturer Samsung semiconductor
Description 16Mx16 SDRAM 54CSP
Published Apr 7, 2005
Detailed Description K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev....
Datasheet PDF File K4S561633C-RL PDF File

K4S561633C-RL
K4S561633C-RL


Overview
K4S561633C-R(B)L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.
0V/3.
0V or 3.
3V/3.
3V) Revision 1.
4 December 2002 Rev.
1.
4 Dec.
2002 K4S561633C-R(B)L/N/P 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES • 3.
0V & 3.
3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1 & 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• DQM for masking • Auto refresh.
• 64ms refresh period (8K cycle).
• Commercial Temperature Operation (-25° C ~ 70 °C).
Extended Temperature Operation ( -25° C ~ 85 °C).
Inderstrial Temperature Operation ( -40° C ~ 85° C).
• 54balls CSP (-RXXX - Pb, -BXXX - Pb Free) CMOS SDRAM GENERAL DESCRIPTION The K4S561633C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabri...



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