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K4S641632C

Part Number	K4S641632C
Manufacturer	Samsung semiconductor
Description	1M x 16Bit x 4 Banks Synchronous DRAM
Published	Apr 7, 2005
Detailed Description	K4S641632C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.3V power supply LVTTL compatible with...
Datasheet	K4S641632C PDF File

Overview

K4S641632C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.
3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4, 8 & Full page) -.
Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) CMOS SDRAM GENERAL DESCRIPTION The K4S641632C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.
Synchronous ...

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