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SI4850EY

Part Number	SI4850EY
Manufacturer	Vishay Siliconix
Description	N-Channel MOSFET
Published	Apr 8, 2005
Detailed Description	Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at V...
Datasheet	SI4850EY PDF File

Overview

Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.
022 at VGS = 10 V 60 0.
031 at VGS = 4.
5 V ID (A) 8.
5 7.
2 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4850EY-T1-E3 (Lead (Pb)-free) Si4850EY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage Gate-Source Voltage VDS VGS 60 ± 20 Continuous Drain Current (TJ =...

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SI4850EY N-Channel MOSFET - Vishay Siliconix

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