Dual N-Channel MOSFET
Description
Si4966DY
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
20 0.025 at VGS = 4.5 V 0.035 at VGS = 2.5 V
ID (A) ± 7.1 ± 6.0
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET
100 % Rg Tested Compliant to RoHS Directive 2002/95/EC
S1 1 G1 2 S2 3 G2 4
SO-8 Top View
8 D1 7 D1...
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