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KM736V989

Samsung semiconductor
Part Number KM736V989
Manufacturer Samsung semiconductor
Description 512Kx36 & 1Mx18 Synchronous SRAM
Published Apr 16, 2005
Detailed Description KM736V989 KM718V089 Document Title 512Kx36 & 1Mx18 Synchronous SRAM 512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SR...
Datasheet PDF File KM736V989 PDF File

KM736V989
KM736V989

Overview
KM736V989 KM718V089 Document Title 512Kx36 & 1Mx18 Synchronous SRAM 512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev.
No.
0.
0 0.
1 0.
2 History Initial draft 1.
Update ICC & ISB values.
1.
Change ISB value from 150mA to 110mA at -67.
2.
Change ISB value from 130mA to 90mA at -72 .
3.
Change ISB value from 120mA to 80mA at -10 .
1.
Add tCYC 167MHz and 183MHz.
2.
Changed DC condition at Icc and parameters Icc ; from 420mA to 400mA at -67, from 400mA to 380mA at -72, from 350mA to 320mA at -10, 1.
Final Spec Release.
Draft Date Dec.
29.
1998 May.
27.
1999 Sep.
04.
1999 Remark Preliminary Preliminary Preliminary 0.
3 Nov.
19.
1999 Preliminary 1.
0 Dec.
08.
1999 Final The attached data sheets are prepared and approved by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right to change the specifications.
SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device.
If you have any questions, please c...


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