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IRF530FP

Part Number	IRF530FP
Manufacturer	STMicroelectronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Published	Apr 16, 2005
Detailed Description	IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530FP s s s s s s V DSS 100 V R DS(on) < 0.16 Ω ID...
Datasheet	IRF530FP PDF File

Overview

IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530FP s s s s s s V DSS 100 V R DS(on) < 0.
16 Ω ID 10 A s s TYPICAL RDS(on) = 0.
12 Ω 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY APPLICATION ORIENTED CHARACTERIZATION HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 1 2 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTER s AUTOMOTIVE ENVRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS, Etc) TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P tot V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max.
Operating Junction Temperatu...

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