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IRF7757

International Rectifier
Part Number IRF7757
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 94174 IRF7757 HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Pack...
Datasheet PDF File IRF7757 PDF File

IRF7757
IRF7757

Overview
PD - 94174 IRF7757 HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.
2mm) Available in Tape & Reel Common Drain Configuration VDSS 20V RDS(on) max (mΩ) 35@VGS = 4.
5V 40@VGS = 2.
5V ID 4.
8A 3.
8A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de- 1 2 3 4 1= 2= 3= 4= S1 G1 S2 G2 8= 7= 6= 5= D D D D 8 7 6 5 signer with an extremely efficient and reliable device for battery and load management...


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