PD - 9.913A
IRF9Z34S/L
HEXFET® Power MOSFET
Advanced Process Technology l Surface Mount (IRF9Z34S) l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description
l
D
VDSS = -60V RDS(on) = 0.14Ω
G S
ID = -18A
Third Generation HEXFETs from International Rectifier utilize advanced proc...
