IRFD9120
Data Sheet July 1999 File Number
2285.3
1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET
This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as swi...
