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IRFI1010N

International Rectifier
Part Number IRFI1010N
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 9.1373A IRFI1010N HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolat...
Datasheet PDF File IRFI1010N PDF File

IRFI1010N
IRFI1010N

Overview
PD - 9.
1373A IRFI1010N HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.
5KVRMS … Sink to Lead Creepage Dist.
= 4.
8mm Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.
012Ω G ID = 49A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional ...


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