DatasheetsPDF.com

RA30H4452M

Mitsubishi Electric Semiconductor
Part Number RA30H4452M
Manufacturer Mitsubishi Electric Semiconductor
Description 30-watt RF MOSFET Amplifier Module
Published Apr 16, 2005
Detailed Description MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M 440-520MHz 30W 12.5V...
Datasheet PDF File RA30H4452M PDF File

RA30H4452M
RA30H4452M

Overview
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M 440-520MHz 30W 12.
5V MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.
5-volt mobile radios that operate in the 440- to 520-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.
Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB.
The output power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and drain current increases substantially.
The nominal o...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)