High Voltage Transistor
Description
High Voltage Transistor (NPN)
BTC4505N3
Features
High breakdown voltage. (BVceo =400V) Low saturation voltage, typically Vce(sat) =0.1V at Ic/Ib=10mA/1mA C
COMCHIP
www.comchiptech.com
COLLECTOR
3 1
BASE
SOT-23
.119 (3.0) .110 (2.8)
2
EMITTER
.020 (0.5)
Top View
.056 (1.40) .047 (1.20)
.006 (0.15) .002 (0.05)
.037(0.95) .037(0.95)
.006 (0.15)max.
....
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