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VTP1112

PerkinElmer Optoelectronics
Part Number VTP1112
Manufacturer PerkinElmer Optoelectronics
Description VTP Process Photodiodes
Published Apr 17, 2005
Detailed Description VTP Process Photodiodes VTP1112 PACKAGE DIMENSIONS inch (mm) CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in...
Datasheet PDF File VTP1112 PDF File

VTP1112
VTP1112

Overview
VTP Process Photodiodes VTP1112 PACKAGE DIMENSIONS inch (mm) CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .
0025 in2 (1.
6 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed.
dual lead TO-46 package.
Cathode is common to the case.
These diodes exhibit low dark current under reverse bias and fast speed of response.
Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46) VTP1112 SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coeff...


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