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APT1001RBN

Advanced Power Technology
Part Number APT1001RBN
Manufacturer Advanced Power Technology
Description MOSFET
Published Apr 23, 2005
Detailed Description D TO-247 G S APT1001RBN 1000V 11.0A 1.00Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Paramet...
Datasheet PDF File APT1001RBN PDF File

APT1001RBN
APT1001RBN

Overview
D TO-247 G S APT1001RBN 1000V 11.
0A 1.
00Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT5030BN 500V 21.
0A 0.
30Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified.
APT 1001RBN UNIT Volts Amps 1000 11 44 ± 30 310 2.
48 -55 to 150 300 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
1 Volts Watts W/°C °C STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Numbe...


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