DatasheetsPDF.com

APT1004RGN

Advanced Power Technology
Part Number APT1004RGN
Manufacturer Advanced Power Technology
Description MOSFET
Published Apr 23, 2005
Detailed Description D G S TO-257 APT1004RGN 1000V 3.3A 4.00Ω TM POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Paramet...
Datasheet PDF File APT1004RGN PDF File

APT1004RGN
APT1004RGN

Overview
D G S TO-257 APT1004RGN 1000V 3.
3A 4.
00Ω TM POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified.
APT1004RGN UNIT Volts Amps 1000 3.
3 13.
2 ±30 100 0.
8 -55 to 150 300 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
1 Volts Watts W/°C °C STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions Drain-So...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)