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MG150Q2YS50

Part Number	MG150Q2YS50
Manufacturer	Toshiba
Description	N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Published	Apr 29, 2005
Detailed Description	TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS50 MG150Q2YS50 High Power Switching Applications Motor Control Appl...
Datasheet	MG150Q2YS50 PDF File

Overview

TOSHIBA GTR Module Silicon N Channel IGBT MG150Q2YS50 MG150Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.
3µs (Max) @Inductive load l Low saturation voltage : VCE (sat) = 3.
6V (Max) l Enhancement-mode l Includes a complete half bridge in one package.
l The electrodes are isolated from case.
Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC EITA TOSHIBA Weight: 255g Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal...

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