Silicon N Channel IGBT GTR Module
Description
TOSHIBA
INSULATED GATE BIPOLAR TRANSISTOR
GTR Module
Silicon N Channel IGBT
High Power Switching Applications Motor Control Applications
Features
High input impedance
High speed:
Low saturation voltage: Enhancement mode
tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat)= 4.0V (Max.)
The electrodes are isolated from case
Includes a complete h...
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