MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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MJE18604D2
Advance Information
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network for 1600 V Applications
The MJE18604D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). Tight dyna...
