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NE85001

Part Number	NE85001
Manufacturer	NEC
Description	1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
Published	May 7, 2005
Detailed Description	PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N...
Datasheet	NE85001 PDF File

Overview

PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on.
NE8500100 is the two-cells recessed gate chip used in ‘99’ package.
The device incorporates Ti-Al gate and silicon dioxide glassivation.
To reduce the thermal resistance, the device has a PHS.
(Plated Heat Sink) NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.
FEATURES • Class A operation • High power output • High reliability PHYSICAL DIMENSIONS NE8500100 (CHIP) (unit: µm) 65 170 146 SELECTION CH...

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