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NTE226

Part Number	NTE226
Manufacturer	NTE
Description	Germanium PNP Transistor Audio Power Amp
Published	May 9, 2005
Detailed Description	NTE226 Germanium PNP Transistor Audio Power Amp Description: The NTE226 is a Germanium PNP transistor in a TO66 type pac...
Datasheet	NTE226 PDF File

Overview

NTE226 Germanium PNP Transistor Audio Power Amp Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high– power output applications.
Absolute Maximum Ratings: Collector–Base Voltage, VCBO .
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35V Collector–Emitter Voltage (RBE = 100Ω), VCER .
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35V Emitter–Base Voltage, VEBO .
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6V Collector Current, IC .
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2A Power Dissipation (TC = +25°C), PC .
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12W Operating Junction Temperature, TJ .
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+85°C Storage Temperature Range, Tstg .
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–55° to +85°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Small–Signal Current Gain Resistance Base Spreading Resistance Symbol ICBO IEBO hFE fob rbb Test Conditions VCB = 25V, IE = 0 VEB = 6V, IC = 0 VCE = 1.
5V, IC = 200mA VCE = 1.
5V, IC = 200mA VCE = 1.
5V, IC = 200mA, f = 6MHz Min Typ Max Unit – – 50 – – – – 0.
7 15 200 200 – – µA µA MHz Ω 100 275 .
593 (15.
08) Dia .
290 (7.
36) .
031 (.
792) .
039 (1.
0) Dia .
295 (7.
5) .
944 (24.
0) Base .
530 (13.
5) .
157 (4.
0) Dia (2 Places) .
315 (8.
0) Collector/Case Emitter ...

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