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NTE243

Part Number	NTE243
Manufacturer	NTE
Description	Silicon Complementary Transistors
Published	May 9, 2005
Detailed Description	NTE243 (NPN) & NTE244 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE243 (NPN) a...
Datasheet	NTE243 PDF File

Overview

NTE243 (NPN) & NTE244 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.
Features: D High DC Current Gain: hFE = 3000 Typ @ IC = 4A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 80V Min @ 100mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 4A = 3V Max @ IC = 8A D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
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80V Collector–Base Voltage, VCB .
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80V Emitter–Base Voltage, VEB .
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5V Collector Current, IC Continuous .
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8A Peak .
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16A Base Current, IB .
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120mA Total Power Dissipation (TC = +25°C), PD .
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100W Derate Above 25°C .
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0.
571W/°C Operating Junction Temperature Range, TJ .
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–65° to +200°C Storage Temperature Range, Tstg .
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