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NDB4050

Fairchild
Part Number NDB4050
Manufacturer Fairchild
Description N-Channel MOSFET
Published May 12, 2005
Detailed Description July 1996 NDP4050 / NDB4050 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enha...
Datasheet PDF File NDB4050 PDF File

NDB4050
NDB4050

Overview
July 1996 NDP4050 / NDB4050 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features 15A, 50V.
RDS(ON) = 0.
10Ω @ VGS=10V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
____________________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage Drain-Gate Voltage (RGS < 1 MΩ) T C = 25°C unless otherwise noted NDP4050 50 50 ± 20 ± 40 ± 15 ± 45 50 0.
33 -65 to 175 275 NDB4050 Units V V V Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed A PD TJ,TSTG TL Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds W W/°C °C °C © 1997 Fairchild Semiconductor Corporation NDP4050 Rev.
B Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS IAR BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) ID(on) gFS Ciss...


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