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SEMH1

Infineon Technologies AG
Part Number SEMH1
Manufacturer Infineon Technologies AG
Description NPN Silicon Digital Transistor Array Preliminary data
Published May 18, 2005
Detailed Description SEMH1 NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver cir...
Datasheet PDF File SEMH1 PDF File

SEMH1
SEMH1

Overview
SEMH1 NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistor (R1=22kΩ, R2 =22kΩ) C1 6 B2 5 E2 4 4 5 3 6 1 2 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07174 TR2 R1 Type SEMH1 Maximum Ratings Parameter Marking WD Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj T stg Value 50 50 10 30 100 250 150 -65 .
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.
150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation , TS = 75 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) mA mW °C RthJS ≤ 300 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-25-2004 SEMH1 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min.
DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 A Collector-base breakdown voltage IC = 10 µA, IE = 0 A Emitter-base breakdown voltage IE = 10 µA, IC = 0 A Collector cutoff current VCB = 40 V, IE = 0 A Emitter cutoff current VEB = 10 V, IC = 0 A DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.
5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.
3 V Input resistor Resistor ratio R1 R1/R2 15 0.
9 22 1 29 1.
1 Vi(on) 1 2.
5 Vi(off) 0.
8 1.
5 VCEsat 0.
3 hFE 50 IEBO 350 ICBO 100 V(BR)EBO V(BR)CEO V(BR)CBO 50 50 typ.
max.
Unit V nA µA V kΩ - AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 pF fT 130 MHz 1) Pulse test: t < 300µs; D < 2% 2 Feb-25-2004 SEMH1 DC Current Gain hFE = f (I C) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) 10 3 VCEsat = f (IC), hFE = 20 10 2 ...


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