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IXFH22N55

IXYS
Part Number IXFH22N55
Manufacturer IXYS
Description HiPerFET Power MOSFET
Published May 21, 2005
Detailed Description HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR...
Datasheet PDF File IXFH22N55 PDF File

IXFH22N55
IXFH22N55

Overview
HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.
6 mm (0.
063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C IXFH 22 N55 VDSS ID (cont) RDS(on) trr = 550 V = 22 A = 0.
27 W £ 250 ns Maximum Ratings 550 550 ±20 ±30 22 88 22 30 5 300 -55 .
.
.
+150 150 -55 .
.
.
+150 300 V V V V A A A mJ V/ns W °C °C °C °C TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features • International standard packages JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance (< 5 nH) - easy to drive and to protect • Fast intrinsic Rectifier Applications 1.
13/10 Nm/lb.
in.
6 g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
550 2 4.
5 ±100 TJ = 25°C TJ = 125°C 250 1 0.
27 V V nA mA mA W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.
8 • VDSS VGS = 0 V • • • • Power Factor Control Circuits Uninterruptible Power Supplies (UPS) Battery chargers Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount with 1 screw (isolated mounting screw hole) • Space savings • High power density VGS = 10 V, ID = 0.
5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % IXYS reserves the right to change limits, test conditions, and dimensions.
94527A (10/95) © 2000 IXYS All rights reserved 1-4 IXFH 22N55 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
11 18 4200 VGS = 0 V, VDS = 25 V, f = 1 MHz 450 ...


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