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BB301

Hitachi
Part Number BB301
Manufacturer Hitachi
Description Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Published Jun 3, 2005
Detailed Description BB301C Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-507 1st. Edition Features • Build in Biasing Circui...
Datasheet PDF File BB301 PDF File

BB301
BB301

Overview
BB301C Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-507 1st.
Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 1.
3 dB typ.
at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode .
Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
Outline CMPAK–4 2 3 4 1 1.
Source 2.
Gate1 3.
Gate2 4.
Drain BB301C Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 ±6 25 100 150 –55 to +150 Unit V V V mA mW °C °C 2 BB301C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 ±6 — — 0.
4 0.
4 10 15 Typ — — — — — — — 15 20 Max — — — +100 ±100 1.
0 1.
0 20 — Unit V V...


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