INSULATED GATE BIPOLAR TRANSISTOR
Description
PD - 91619B
IRG4BC30K-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter distribution and higher efficiency than previous generations
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