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IRG4BC20SD-S

IRF
Part Number IRG4BC20SD-S
Manufacturer IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Aug 23, 2005
Detailed Description PD -91794 IRG4BC20SD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low vo...
Datasheet PDF File IRG4BC20SD-S PDF File

IRG4BC20SD-S
IRG4BC20SD-S

Overview
PD -91794 IRG4BC20SD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.
4Vtyp.
@ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
• Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard D2Pak package C Standard Speed IGBT VCES = 600V G E VCE(on) typ.
= 1.
4V @VGE = 15V, IC = 10A n-cha nnel Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimiz...


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