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FQA9N90C

Fairchild Semiconductor
Part Number FQA9N90C
Manufacturer Fairchild Semiconductor
Description 900V N-Channel MOSFET
Published Sep 24, 2005
Detailed Description FQA9N90C QFET FQA9N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tr...
Datasheet PDF File FQA9N90C PDF File

FQA9N90C
FQA9N90C

Overview
FQA9N90C QFET FQA9N90C 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
TM Features • • • • • • 9A, 900V, RDS(on) = 1.
4Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! TO-3P G DS ...


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