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TPCS8102

Part Number	TPCS8102
Manufacturer	Toshiba Semiconductor
Description	Silicon P-Channel MOS Type Field Effect Transistor
Published	Sep 26, 2005
Detailed Description	TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8102 Lithium Ion Battery Application...
Datasheet	TPCS8102 PDF File

Overview

TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8102 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.
) High forward transfer admittance: |Yfs| = 17 S (typ.
) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement-mode: Vth = −0.
5~−1.
2 V (VDS = −10 V, ID = −200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR ...

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