TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP27N10E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTP27N10E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design ...
Similar Datasheet
