Advanced Power MOSFET
Description
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ.)
IRFM110A
BVDSS = 100 V RDS(on) = 0.4 Ω ID = 1.5 A
SOT-223
2 1 3
1. Gate 2. Drain 3. Source
Absolute Maximum Rating...
Fairchild Semiconductor
IRFM110A PDF File
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