TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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™ Data Sheet TMOS E-FET.™ High Energy Power FET
Designer's
MTP5N40E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device ...
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