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MRF234

Advanced Semiconductor
Part Number MRF234
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Nov 3, 2005
Detailed Description MRF234 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF234 is Designed for Large-Signal Amplifier Applications ...
Datasheet PDF File MRF234 PDF File

MRF234
MRF234

Overview
MRF234 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF234 is Designed for Large-Signal Amplifier Applications to 100 MHz.
PACKAGE STYLE .
380" 4L STUD .
112x45° A FEATURES: • Common Emitter C B • Omnigold™ Metalization System • PG = 9.
5 dB min.
at 25 W/ 90 MHz D E ØC E B H I J MAXIMUM RATINGS IC VCE VCB PDISS TJ TSTG θJC 4.
0 A 18 V 36 V 70 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.
5 °C/W DIM A B C D E F G H I J #8-32 UNC-2A F E G MINIMUM inches / mm MAXIMUM inches / mm .
220 / 5.
59 .
980 / 24.
89 .
370 / 9.
40 .
004 / 0.
10 .
320 / 8.
13 .
100 / 2.
54 .
450 / 11.
43 .
090 / 2.
29 .
155 / 3.
94 .
230 / 5.
84 .
385 / 9.
78 .
007 / 0.
18 .
330 / 8.
38 .
130 / 3.
30 .
490 / 12.
45 .
100 / 2.
54 .
175 / 4.
45 .
750 / 19.
05 CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO ICBO hFE Cob GPE η TC = 25 C O TEST CONDITIONS IC = 200 mA IC = 200 mA IE = 5.
0 mA VCB = 15 V VCE = 5.
0 V VCB = 12.
5 V VCC = 12.
5 V Pout = 25 W IC = 1.
0 A f = 1.
0 MHz f = 90 MHz MINIMUM TYPICAL MAXIMUM 36 18 4.
0 1.
0 5.
0 100 9.
5 55 120 UNITS V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...


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