DatasheetsPDF.com

IMH20

Rohm
Part Number IMH20
Manufacturer Rohm
Description General purpose (dual digital transistors)
Published Nov 21, 2005
Detailed Description IMH20 Transistors General purpose (dual digital transistors) IMH20 zFeatures 1) Two DTC323T chips in a SMT package. 2) ...
Datasheet PDF File IMH20 PDF File

IMH20
IMH20

Overview
IMH20 Transistors General purpose (dual digital transistors) IMH20 zFeatures 1) Two DTC323T chips in a SMT package.
2) Mounting possible with SMT3 automatic mounting machines.
3) Transistor elements are independent, eliminating interference.
zExternal dimensions (Unit : mm) IMH20 0.
95 0.
95 1.
9 2.
9 0.
8 0to0.
1 (6) 0.
3 (4) (5) 1.
6 2.
8 0.
15 (3) (2) (1) 0.
3to0.
6 zStructure Epitaxial planar type NPN silicon transistor Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol : H20 The following characteristics apply to both DTr1 and DTr2.
zEquivalent circuit (4) (5) (6) R R (3) (2) (1) R=2.
2kΩ zPackaging specifications Package Code Type IMH20 Basic ordering unit (pieces) Taping T110 3000 1.
1 1/3 IMH20 Transistors zAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 30 15 5 600 300 (TOTAL) 150 −55 to +150 Unit V V V mA mW °C °C ∗ ∗ 200mW per element must not be exceeded.
zElectrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency Output on resistoance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT Ron Min.
30 15 5 − − − 100 1.
64 − − Typ.
− − − − − 40 250 2.
2 200 0.
65 Max.
− − − 0.
5 0.
5 80 600 2.
86 − − Unit V V V µA µA mV − kΩ MHz Ω IC=50µA IC=1mA IE=50µA VCB=20V VEB=4V Conditions IC/IB=50mA/2.
5mA IC=50mA , VCE=5V − VCE=10V, IE= −50mA, f=100MHz VCE=7V, IE=1kΩ, f=1KHz ∗ ∗ Transition frequency of the device zElectrical characteristic curves COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1k 500 VCE=5V 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 1m 2m 5m 10m 20m IC/IB=20 ON RESISTANCE : Ron (Ω) 100...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)