Transistor
Description
Transistors
MSG43001
SiGe HBT type
For low-noise RF amplifier ■ Features
Compatible between high breakdown voltage and high cutoff frequency Low-noise, high-gain amplification Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm)
Unit: mm
1 1.00±0.05
0.60±0.05
3
2
0...
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