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IRL3103D2

International Rectifier
Part Number IRL3103D2
Manufacturer International Rectifier
Description MOSFET & SCHOTTKY RECTIFIER
Published Jan 3, 2006
Detailed Description PD 9.1660 PRELIMINARY l l l l l IRL3103D2 D FETKYTM MOSFET & SCHOTTKY RECTIFIER Copackaged HEXFET® Power MOSFET and S...
Datasheet PDF File IRL3103D2 PDF File

IRL3103D2
IRL3103D2

Overview
PD 9.
1660 PRELIMINARY l l l l l IRL3103D2 D FETKYTM MOSFET & SCHOTTKY RECTIFIER Copackaged HEXFET® Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application VDSS = 30V RDS(on) = 0.
014Ω G ID = 54A S Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications.
A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconnect inductance and resistance result in maximized converter efficiencies.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max.
54 34 220 2.
0 70 0.
56 ± 16 -55 to + 150 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Units A W W W/°C V °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient Typ.
––– ––– Max.
1.
8 62 Units °C/W 7/16/97 IRL3103D2 MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-t...


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