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2SK0615

Panasonic Semiconductor
Part Number 2SK0615
Manufacturer Panasonic Semiconductor
Description Silicon N-Channel MOSFET
Published Jan 6, 2006
Detailed Description Silicon MOS FETs (Small Signal) 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm I Features 2.0±0.2 ...
Datasheet PDF File 2SK0615 PDF File

2SK0615
2SK0615


Overview
Silicon MOS FETs (Small Signal) 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching Unit: mm I Features 2.
0±0.
2 G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
6.
9±0.
1 (0.
4) 2.
5±0.
1 (1.
0) (1.
0) 3.
5±0.
1 2.
4±0.
2 (1.
5) (1.
5) R 0.
9 R 0.
7 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature * Symbol VDS VGSO ID IDP PD * Tch Tstg Ratings 80 20 ±0.
5 ±1 1 150 −55 to +150 Unit V V A A W °C °C 1 1.
0±0.
1 (0.
85) 1.
25±0.
05 0.
45±0.
05 0.
55±0.
1 2 (2.
5) 3 (2.
5) 1: Source 2: Drain 3: Gate EIAJ: SC-71 M-A1 Package PC board: Copper foil of the drain portion should have a area of 1cm2 or more and the board thickness should be 1.
7mm.
I Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS Vth RDS(on)*1 | Yfs | Coss ton *1, 2 Conditions VDS = 60V, VGS = 0 VGS = 20V, VDS = 0 IDS = 100µA, VGS = 0 ID = 1mA, VDS = VGS ID = 0.
5A, VGS = 10V ID = 0.
2A, VDS = 15V, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz min typ max 10 0.
1 Unit µA µA V V Ω mS pF pF pF ns ns 80 1.
5 2 300 45 30 8 15 20 3.
5 4 Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Turn-off time *1 *2 toff*1, 2 Pulse measurement t on, toff measurement circuit Vout Vin = 10V 68Ω 50Ω VDD = 30V Vout Vin 10% Vin 10% 90% t = 1µS f = 1MHZ 90% V out ton toff Note) The part number in the parenthesis shows conventional part number.
4.
1±0.
2 4.
5±0.
1 1 Silicon MOS FETs (Small Signal) PD  Ta 1.
6 1.
2 Copper foil of the drain port...


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