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MTV32N20E

Part Number	MTV32N20E
Manufacturer	Motorola
Description	TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM
Published	Jan 8, 2006
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV32N20E/D Advance Information TMOS E-FET.™ Power Fiel...
Datasheet	MTV32N20E PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV32N20E/D Advance Information TMOS E-FET.
™ Power Field Effect Transistor D3PAK for Surface Mount This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time.
In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for high speed switching applications in power supplies, converters, PWM motor controls, these devices are particularly well suited for bridge circuits where diode spe...

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