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FLM5964-6F

Part Number	FLM5964-6F
Manufacturer	Eudyna Devices
Description	C-Band Internally Matched FET
Published	Jan 12, 2006
Detailed Description	w m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 38.5dBm (Typ.) U • High Gain: G1dB = 10.0dB...
Datasheet	FLM5964-6F PDF File

Overview

w m C-Band Internally Matched FET o FEATURES .
c • High Output Power: P1dB = 38.
5dBm (Typ.
) U • High Gain: G1dB = 10.
0dB (Typ.
) 4 t • High PAE: ηadd = 37% (Typ.
) e = 27.
5dBm • Low IM3 = -46dBc@Po e • Broad Band: 5.
9h ~ 6.
4GHz S • Impedance Matched Zin/Zout = 50Ω aSealed Package t • Hermetically a DESCRIPTION D .
The FLM5964-6F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gain in a w 50 ohm system.
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Condition FLM5964-6F Eudyna’s stringent Quality Assurance Program assures the highest reliabil...

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