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BC32740

Fairchild Semiconductor
Part Number BC32740
Manufacturer Fairchild Semiconductor
Description PNP EPITAXIAL SILICON TRANSISTOR
Published Feb 8, 2006
Detailed Description BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • ...
Datasheet PDF File BC32740 PDF File

BC32740
BC32740

Overview
BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1.
Collector 2.
Base 3.
Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC327 : BC328 Collector-Emitter Voltage : BC327 : BC328 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -30 -45 -25 -5 -800 625 150 -55 ~ 150 Units V V V V V mA mW °C °C VCEO VEBO IC PC TJ TSTG Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC327 : BC328 Collector-Emitter Breakdown Voltage : BC327 : BC328 Emitter-Base Breakdown Voltage Collector Cut-off Current : BC327 : BC328 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC= -10mA, IB=0 Min.
-45 -25 IC= -0.
1mA, VBE=0 -50 -30 IE= -10µA, IC=0 VCE= -45V, VBE=0 VCE= -25V, VBE=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -300mA IC= -500mA, IB= -50mA VCE= -1V, IC= -300mA VCE= -5V, IC= -10mA, f=20MHz VCB= -10V, IE=0, f=1MHz 100 12 100 40 -5 -2 -2 -100 -100 630 -0.
7 -1.
2 V V MHz pF V V V nA nA Typ.
Max.
Units V V BVCES BVEBO ICES hFE1 hFE2 VCE (sat) VBE (on) fT Cob hFE Classification Classification hFE1 hFE2 16 100 ~ 250 6025 160 ~ 400 10040 250 ~ 630 170- ©2002 Fairchild Semiconductor Corporation Rev.
B1, August 2002 BC327/328 Typical Characteristics -500 -20 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT -400 -300 mA - 5.
0 A I B = - 4.
5m I B = 4.
0mA A I B = - 3.
5m A I B = - 3.
0m A I B = - 2.
5m mA IB = - 2.
0 IB = IB= -16 µA - 80 µA - 70 I = B IB= µA - 60 IB= P T µA - 50 IB= - 40 =6 00 mW -12 µA 30µA 1.
5 IB = -200 mA IB = - 1.
0mA IB = - 0.
5mA PT = 60 0mW -8 IB = - 0µA IB = - 2 -4 -100 IB = - 10µA IB = 0 -0 -1 -2 -3 -4 -5 IB = 0 ...


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