64M-Bit CMOS NAND EPROM
Description
TC58V64BFT
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2
64-MBIT (8M ´ 8 BITS) CMOS NAND E PROM DESCRIPTION
The TC58V64B is a single 3.3 V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes ´ 16 pages ´ 1024 blocks. The device has a 528-byte static register which ...
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