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2SC5480

Part Number	2SC5480
Manufacturer	Hitachi Semiconductor
Description	Silicon NPN Triple Diffused Planar Transistor
Published	Apr 8, 2006
Detailed Description	2SC5480 Silicon NPN Triple Diffused Horizntal Deflection Output ADE-208-632 (Z) 1st. Edition Oct. 1, 1998 Features • Hi...
Datasheet	2SC5480 PDF File

Overview

2SC5480 Silicon NPN Triple Diffused Horizntal Deflection Output ADE-208-632 (Z) 1st.
Edition Oct.
1, 1998 Features • High breakdown voltage VCES = 1500 V • Isolated package TO–3PFM • Built-in damper diode Outline TO–3PFM C 2 1 B 3 E 1 2 3 1.
Base 2.
Collector 3.
Emitter www.
DataSheet4U.
com www.
DataSheet4U.
com www.
DataSheet4U.
com 2SC5480 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Collector to emitter diode forward current Note: 1.
Value at Tc = 25° C Symbol VCES VEBO IC ic(peak) PC Tj Tstg ID Note1 Ratings 1500 5 14 28 ...

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