Power MOSFET
Description
HEXFET® Power MOSFET
PD - 9.1229
IRFP350LC
Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated
VDSS = 400V RDS(on) = 0.30Ω ID = 16A
Description
This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate ...
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