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TOSHIBA
MICROWAVE POWER GaAs FET
Features Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz Broadband internally matched Hermetically sealed package RF Performance Specifications (Ta = 25°C)
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