DatasheetsPDF.com

H7N0308CF

Hitachi Semiconductor
Part Number H7N0308CF
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Published Aug 23, 2006
Detailed Description H7N0308CF Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • RDS(on) = 3.8 mΩ typ. • L...
Datasheet PDF File H7N0308CF PDF File

H7N0308CF
H7N0308CF

Overview
H7N0308CF Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • RDS(on) = 3.
8 mΩ typ.
• Low drive current • 4.
5 V gate drive device can be driven from 5 V source Outline TO-220CFM ADE-208-1570A(Z) 2nd.
Edition Aug.
2002 D G S 123 1.
Gate 2.
Drain 3.
Source H7N0308CF Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation V DSS V GSS ID I Note 1 D(pulse) I DR Pch Note 2 Channel to Case Thermal Impedance θch-c Channel to Ambient Thermal Impedance θch-a Channel temperature Tch Storage temperature Tstg Notes: 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Ratings 30 ±20 60 240 60 30 4.
17 62.
5 150 –55 to +150 Unit V V A A A W °C/W °C/W °C °C Rev.
1, Aug.
2002, page 2 of 2 H7N0308CF Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 30 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current I — GSS Zero gate voltage drain current I — DSS Gate to source cutoff voltage VGS(off) 1.
0 Static drain to source on state RDS(on) — resistance — Forward transfer admittance Input capacitance |yfs| 42 Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Total gate charge Qg — Gate to source charge Qgs — Gate to drain charge Qgd — Turn-on delay time td(on) — Rise time tr — Turn-off delay time td(off) — Fall time tf — Body–drain diode forward voltage VDF — Body–drain diode reverse recovery trr — time Notes: 1.
Pulse test Typ Max — — — — — ±10 — 10 — 2.
5 3.
8 4.
8 6.
0 8.
5 70 — 3350 — 840 — 480 — 52 — 11 — 10 — 30 — 370 — 80 — 27 — 0.
90 — 55 — Unit V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 V = ±16 V, V = 0 GS DS V = 30 V, V = 0 DS GS ID = 1 mA, VDS = 10 V No...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)