HEXFET Power MOSFET
Description
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PD - 9.891A
IRFZ24S/L
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching
D
VDSS = 60V RDS(on) = 0.10Ω
G
ID = 17A
Description
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to ac...
International Rectifier
IRFZ24S PDF File
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