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IXTH30N50

Part Number	IXTH30N50
Manufacturer	IXYS Corporation
Description	Power MOSFET
Published	Nov 7, 2006
Detailed Description	www.DataSheet4U.com MegaMOSTMFET N-Channel Enhancement Mode IXTH 30N50 VDSS = 500 V 30 A ID (cont) = RDS(on) = 0.17 Ω...
Datasheet	IXTH30N50 PDF File

Overview

www.
DataSheet4U.
com MegaMOSTMFET N-Channel Enhancement Mode IXTH 30N50 VDSS = 500 V 30 A ID (cont) = RDS(on) = 0.
17 Ω Symbol V DSS V DGR VGS VGSM ID25 IDM PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Maximum Ratings 500 500 ± 20 ± 30 30 120 360 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A W °C °C °C °C TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain 1.
6 mm (0.
063 in) from case for 10 s Mounting torque 300 1.
13/10 Nm/lb.
in.
6 g Features z International standard package JEDEC TO-247 AD z Low RDS (on) HDMOSTM process z Rugged polysilicon gate...

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